Memory devices

ABSTRACT

Some embodiments include a NAND memory array which has a vertical stack of alternating insulative levels and wordline levels. The wordline levels have terminal ends corresponding to control gate regions. Charge-trapping material is along the control gate regions of the wordline levels, and is spaced from the control gate regions by charge-blocking material. The charge-trapping material along vertically adjacent wordline levels is spaced by intervening regions through which charge migration is impeded. Channel material extends vertically along the stack and is spaced from the charge-trapping material by charge-tunneling material. Some embodiments include methods of forming NAND memory arrays.

RELATED PATENT DATA

This application resulted from a continuation of U.S. patent applicationSer. No. 15/422,307, filed Feb. 1, 2017, the disclosures of which areincorporated herein by reference.

TECHNICAL FIELD

NAND memory arrays, and methods of forming NAND memory arrays.

BACKGROUND

Memory provides data storage for electronic systems. Flash memory is onetype of memory, and has numerous uses in modern computers and devices.For instance, modern personal computers may have BIOS stored on a flashmemory chip. As another example, it is becoming increasingly common forcomputers and other devices to utilize flash memory in solid statedrives to replace conventional hard drives. As yet another example,flash memory is popular in wireless electronic devices because itenables manufacturers to support new communication protocols as theybecome standardized, and to provide the ability to remotely upgrade thedevices for enhanced features.

NAND may be a basic architecture of integrated flash memory. A NAND cellunit comprises at least one selecting device coupled in series to aserial combination of memory cells (with the serial combination commonlybeing referred to as a NAND string). NAND architecture may be configuredin a three-dimensional arrangement comprising vertically-stacked memorycells. It is desired to develop improved NAND architecture.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross-sectional side view of an exampleintegrated structure having a region of an example NAND memory array.

FIG. 2 is a diagrammatic cross-sectional side view of another exampleintegrated structure having a region of another example NAND memoryarray.

FIGS. 3-12 are diagrammatic cross-sectional side views of an exampleintegrated structure at process stages of an example method.

FIGS. 13-17 are diagrammatic cross-sectional side views of an exampleintegrated structure at process stages of an example method. The processstage of FIG. 13 may follow that of FIG. 7.

FIGS. 18-20 are diagrammatic cross-sectional side views of an exampleintegrated structure at process stages of an example method. The processstage of FIG. 18 may follow that of FIG. 8.

FIGS. 21 and 22 are diagrammatic cross-sectional side views of anexample integrated structure at process stages of an example method. Theprocess stage of FIG. 21 may follow that of FIG. 15.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Operation of NAND memory cells comprises movement of charge between achannel material and a charge-storage material. For instance,programming of a NAND memory cell may comprise moving charge (i.e.,electrons) from the channel material into the charge-storage material,and then storing the charge within the charge-storage material. Erasingof the NAND memory cell may comprise moving holes into thecharge-storage material to recombine with electrons stored in thecharge-storage material, and thereby release charge from thecharge-storage material. The charge-storage material may comprisecharge-trapping material (for instance, silicon nitride, metal dots,etc.). A problem with conventional NAND can be that charge-trappingmaterial extends across multiple memory cells of a memory array, and canenable charge migration between the cells. The charge migration betweenmemory cells may lead to data retention problems. Some embodimentsinclude structures which impede migration of charge between memorycells. In example embodiments, the structures utilized to impede chargemigration may be thinned regions of the charge-trapping material inregions between memory cells, or may be breaks in the charge-trappingmaterial in regions between memory cells. Example embodiments aredescribed with reference to FIGS. 1-22.

Referring to FIG. 1, a portion of an integrated structure 10 isillustrated, with such portion including a fragment of athree-dimensional NAND memory array 12.

The integrated structure 10 comprises a stack 15 of alternating firstand second levels 18 and 20. The levels 18 are insulative (i.e.dielectric), and the levels 20 are conductive.

The insulative levels 18 comprise insulative material 26. Suchinsulative material may comprise any suitable composition or combinationof compositions; and may, for example, comprise silicon dioxide.

The conductive levels 20 comprise conductive materials 28 and 30. Theconductive material 28 may be considered to be a conductive core, andthe conductive material 30 may be considered to be an outer conductivelayer surrounding the conductive core. The conductive materials 28 and30 may comprise different compositions relative to one another. In someembodiments, the conductive material 28 may comprise, consistessentially of, or consist of one or more metals (for instance,tungsten, titanium, etc.), and the conductive material 30 may comprise,consist essentially of, or consist of one or more metal-containingcompositions (for instance, metal nitride, metal silicide, metalcarbide, etc.). In some embodiments, the conductive core material 28 maycomprise, consist essentially of, or consist of one or more metals (forinstance, tungsten, titanium, etc.), and the surrounding conductivematerial 30 may comprise, consist essentially of, or consist of one ormore metal nitrides (for instance, titanium nitride, tungsten nitride,etc.).

The materials 28/30 illustrate an example configuration of theconductive levels 20. In other embodiments, the conductive levels 20 maycomprise other configurations of conductive material; and may, forexample, comprise a single conductive material or more than theillustrated two conductive materials. Generally, the conductive levels20 may comprise conductive material having any suitable composition orcombination of compositions; and may comprise, for example, one or moreof various metals (for example, tungsten, titanium, etc.),metal-containing compositions (for example, metal nitride, metalcarbide, metal silicide, etc.), and conductively-doped semiconductormaterials (for example, conductively-doped silicon, conductively-dopedgermanium, etc.).

Insulative material 32 forms an insulative liner surrounding the outerconductive layer of material 30. The insulative material 32 may comprisehigh-k material (for instance, one or more of aluminum oxide, hafniumoxide, zirconium oxide, tantalum oxide, etc.); where the term “high-k”means a dielectric constant greater than that of silicon dioxide.Although the insulative material 32 is shown to be a single homogenousmaterial, in other embodiments the insulative material may comprise twoor more discrete compositions. For instance, in some embodiments theinsulative material 32 may comprise a laminate of silicon dioxide andone or more high-k materials. In some embodiments, the insulativematerial 32 may be referred to as a charge-blocking material.

In some embodiments, the conductive levels 20 may be considered to bewordline levels of a NAND memory array. Terminal ends 34 of the wordlinelevels 20 may function as control gate regions 35 of NAND memory cells36, with approximate locations of the memory cells 36 being indicatedwith brackets in FIG. 1.

The conductive levels 20 and insulative levels 18 may be of any suitablevertical thicknesses. In some embodiments, the conductive levels 20 andthe insulative levels 18 may have vertical thicknesses within a range offrom about 10 nanometers (nm) to about 300 nm. In some embodiments, theconductive levels 20 may have about the same vertical thicknesses as theinsulative levels 18. In other embodiments, the conductive levels 20 mayhave substantially different vertical thicknesses than the insulativelevels 18.

The vertically-stacked memory cells 36 form a vertical string (such as,for example, a vertical NAND string of memory cells), with the number ofmemory cells in each string being determined by the number of conductivelevels 20. The stack may comprise any suitable number of conductivelevels. For instance, the stack may have 8 conductive levels, 16conductive levels, 32 conductive levels, 64 conductive levels, 512conductive levels, 1028 conductive levels, etc.

The insulative materials 26 and 32 may be considered to form sidewalls38 of an opening 40 extending through stack 15, with such sidewallsundulating inward along material 26, and outward along the material 32.The opening 40 may have a continuous shape when viewed from above; andmay be, for example, circular, elliptical, etc. Accordingly, thesidewalls 38 of FIG. 1 may be comprised by a continuous sidewall thatextends around the periphery of opening 40.

Charge-blocking material 42 extends along the terminal ends 34 ofwordline levels 20, and is spaced from conductive material 30 of thewordline levels 20 by the insulative material 32. In the illustratedembodiment, the charge-blocking material 42 wraps around the terminalends 34 of the wordline levels 20.

The charge-blocking material 42 forms charge-blocking regions of thememory cells 30. The charge-blocking material 42 may comprise anysuitable composition or combination of compositions; including, forexample, silicon dioxide, one or more high-k dielectric materials, etc.In some embodiments, the insulative material 32 and charge-blockingmaterial 42 together form charge-blocking regions of the memory cells36.

Charge-storage material 44 extends along the terminal ends 34 (i.e.,control gate regions 35) of wordline levels 20, and is spaced from theterminal ends 34 by the charge-blocking materials 32/42. Thecharge-storage material 44 may comprise any suitable composition orcombination of compositions; and in some embodiments, may comprisefloating gate material (for instance, doped or undoped silicon) orcharge-trapping material (for instance, silicon nitride, metal dots,etc.). In some embodiments, the charge-storage material 44 may comprise,consist essentially of, or consist of material comprising silicon andnitrogen. In some embodiments, the charge-storage material 44 mayconsist of silicon nitride, and may have a horizontal thickness T₁within a range of from about 3 nm to about 10 nm. In some aspects, a“charge trap” refers to an energy well that can reversibly capture acharge carrier (e.g., an electron or hole).

The charge-storage material 44 is provided in vertically-stackedsegments 43, which are spaced from one another by gaps 45. The gaps 45may be referred to as intervening regions through which charge migrationis impeded. In some embodiments, the charge-storage material 44comprises charge-trapping material (e.g., silicon nitride), and the gaps45 prevent charge from migrating between vertically-adjacent memorycells 36. In contrast, conventional three-dimensional NAND memory arraysmay have a continuous layer of charge-trapping material extending alongall of the vertically-stacked memory cells of a NAND string, and suchmay undesirably enable charge-migration between the memory cells of theNAND string and data loss. The embodiment of FIG. 1 may have improveddata retention as compared to such conventional three-dimensional NANDmemory arrays.

Gate-dielectric material 46 extends vertically along the charge-storagematerial 42, and extends into the gaps 45. The gate-dielectric material46 may comprise any suitable composition or combination of compositions;and in some embodiments may comprise, consist essentially of, or consistof silicon dioxide. The gate-dielectric material 46 forms gatedielectric regions of memory cells 36. In some embodiments, theinsulative material 26 of levels 18 may be considered to be firstinsulative material, and the gate-dielectric material 46 may beconsidered to be second insulative material which is within gaps 45between the segments of charge-storage material 44. The first and secondinsulative materials 26 and 46 may be the same composition as oneanother in some embodiments (for instance, both may comprise, consistessentially of, or consist of silicon dioxide), or may becompositionally different from one another in other embodiments. Thefirst and second insulative materials 26 and 46 join to one anotheralong interfaces 47. In some embodiments, voids 49 (shown in dashed lineto indicate that they are optional) may extend into the first insulativematerial 26 along the interfaces 47. The voids 49 may form duringdeposition of material 26, as discussed in more detail below withreference to FIG. 10. The gate-dielectric material can function as amaterial through which charge carriers tunnel or otherwise pass duringprogramming operations, erasing operations, etc. In some contexts, thegate-dielectric material may be referred to simply as an insulativematerial or a dielectric material.

In the shown embodiment, the first insulative material 26 has a verticalthickness T₂ along the interface 47, and the second insulative material46 has a vertical thickness T₃ along the interface 47. The verticalthickness T₃ is less than the vertical thickness T₂, and in someembodiments may be less than or equal to about one-half of the verticalthickness T₂. The vertical thicknesses T₂ and T₃ of materials 26 and 46may be referred to as first and second vertical thickness, respectively,in some embodiments.

Channel material 48 extends vertically along the gate-dielectricmaterial 46 (and, in some embodiments may be considered to extendvertically along the stack 15), and is spaced from the charge-storagematerial 44 by the gate-dielectric material 46. The channel material 48may comprise any suitable composition or combination of compositions;and in some embodiments may comprise, consist essentially of, or consistof appropriately-doped silicon. The channel material is referred to as“extending vertically” to indicate that it generally extends through thestack 15. The vertically-extending material 48 (and other materialsdescribed herein as extending vertically) may extend substantiallyorthogonally relative to upper surfaces of the levels 18 and 20 (asshown), or not; depending on, for example, whether opening 40 hassidewalls which are substantially orthogonal to the upper surfaces ofthe levels 18 and 20, or not.

In some embodiments, the gate-dielectric material 46 may be consideredto be a charge-tunneling material; i.e., to be a material through whichcharge tunnels between the charge-storage material 44 and the channelmaterial 48 of the memory cells 36 during programming operations,erasing operations, etc. The charge-tunneling material may comprisesilicon dioxide, as described above, or may comprise bandgap-engineeredmaterials (such as silicon nitride laterally sandwiched between twooxides, where one or both to the oxides may be silicon dioxide).

In the illustrated embodiment, an insulative region 50 extends along amiddle of opening 40. The insulative region 50 may comprise any suitableinsulative composition; including, for example, silicon dioxide, siliconnitride, etc. Alternatively, at least a portion of the insulative region50 may be a void. The illustrated embodiment having the insulativeregion 50 extending down the middle of opening 40 is a so-calledhollow-channel configuration. In other embodiments, the channel material48 may entirely fill the central region of opening 40 to form avertically-extending pedestal within such central region.

The stack 15 is supported by a base 52. A break is provided between thebase 52 and the stack 15 to indicate that there may be additionalmaterials and/or integrated circuit structures between the base 52 andthe stack 15. In some applications, such additional integrated materialsmay include, for example, source-side select gate material (SGSmaterial).

The base 52 may comprise semiconductor material; and may, for example,comprise, consist essentially of, or consist of monocrystalline silicon.The base 52 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above. In someapplications, the base 52 may correspond to a semiconductor substratecontaining one or more materials associated with integrated circuitfabrication. Such materials may include, for example, one or more ofrefractory metal materials, barrier materials, diffusion materials,insulator materials, etc.

FIG. 2 shows a construction 10 a having a NAND memory array 12 aillustrating another example configuration. The configuration of FIG. 2is similar to that of FIG. 1, except that the gaps 45 (FIG. 1) arereplaced with thinned regions 51 of charge-storage material 44. Thethinned regions 51 have a thickness T₄ which is much less than thethickness T₁ of the charge-storage material along the control gateregions 35. The thinned regions 51 are formed to be thin enough toimpede charge migration, and accordingly correspond to interveningregions between memory cells 36 which impede charge migration from onememory cell to another. In some embodiments, the thickness T₄ of thethinned regions 51 may be less than on-half of the thickness T₁ of thecharge-storage material segments within the memory cells 36. In someembodiments, the thickness T₄ of the thinned regions 51 may be less thanabout 2 nm, less than about 1 nm, less than about 0.5 nm, etc. In someembodiments, the thinned regions 51 may be about 1 monolayer thick.

The three-dimensional NAND configurations of FIGS. 1 and 2 may befabricated utilizing any suitable methodology. Example methodology isdescribed with reference to FIGS. 3-22. A first example embodimentmethod is described with reference to FIGS. 3-12.

Referring to FIG. 3, a construction 10 b includes a vertical stack 60 ofalternating first levels 62 and second levels 64 over the base 52. Thefirst levels 62 comprise first material 66, and the second levels 64comprise second material 68. The first and second materials 66 and 68may comprise any suitable compositions or combinations of compositions.The first material 66 is selectively removable relative to the secondmaterial 68, and vice versa. In some embodiments, the first material 66comprises, consists essentially of, or consists of silicon dioxide; andthe second material 68 comprises, consists essentially of, or consistsof silicon nitride.

Referring to FIG. 4, the opening 40 is formed to extend through thestack 60. The opening 40 may be formed utilizing any suitablemethodology. For instance, a patterned mask (not shown) may be formedover the stack 60 to define a location of the opening 40, and then theopening 40 may be formed to extend through the stack 60 with one or moresuitable etches. Subsequently, the patterned mask may be removed.

The opening 40 has sidewalls 65 extending along the first and secondmaterials 66 and 68.

Referring to FIG. 5, the first levels 62 are recessed relative to thesecond levels 64. Such recessing may be accomplished utilizing anysuitable etch selective for the first material 66 relative to the secondmaterial 68. After the first levels 62 are recessed, the second levels64 have projecting terminal ends 70 which extend outwardly beyond therecessed first levels 62. Cavities 72 extend into the first levels 62between the projecting terminal ends 70. Undulating sidewall surfaces 73of opening 40 extend into cavities 72 and around the projecting terminalends 70.

Referring to FIG. 6, charge-blocking material 42 is formed along theundulating sidewall surfaces 73, and charge-storage material 44 isformed along the charge-blocking material 42. The materials 42/44 extendinto the cavities 72 and around the projecting terminal ends 70. In someembodiments, the materials 42/44 may be considered to line the cavities72. A charge block may have the following functions in a memory cell: ina program mode, the charge block may prevent charge carriers frompassing out of the charge-storage material (e.g., floating-gatematerial, charge-trapping material, etc.) toward the control gate; andin an erase mode, the charge block may prevent charge carriers fromflowing into the charge-storage material from the control gate. Acharge-blocking region may comprise any suitable material(s) orstructure(s) providing desired charge-blocking properties; and may, forexample, comprise: an insulative material between control gate andcharge-storage material; an outermost portion of a charge-trappingmaterial where such material is dielectric and independent of where“charge” is stored in such portion; an interface between the controlgate and the charge-trapping material, etc.

Referring to FIG. 7, gate-dielectric material 46 is formed to extendvertically along the charge-storage material 44, and to fill thecavities 72. Channel material 48 is formed to extend vertically alongthe gate-dielectric material 46. Insulative material 74 is then formedwithin a remaining central region of opening 40. The insulative material74 forms the insulative region 50 described above with reference to FIG.1; and may comprise any suitable composition or combination ofcompositions (such as, for example, silicon nitride, silicon dioxide,etc.). In some embodiments, the insulative material 74 may be omittedand a void may be left within the central region of opening 40.Alternatively, channel material 48 may be formed to entirely fill theopening 40.

Referring to FIG. 8, the first material 66 (FIG. 7) is removed to leavevoids 76. Such removal may be accomplished with any suitable etch whichis selective for the first material 66 relative to the second material68. In a processing step which is not shown, slits may be formed throughstack 60 (FIG. 7) to provide access to the first and second levels 62/64(FIG. 7). Etchant may be flowed into such slits to access the firstmaterial 66 (FIG. 7).

Referring to FIG. 9, the charge-blocking material 42 and charge-storagematerial 44 are etched with etchant provided in voids 76. The etchingremoves regions of the charge-storage material 42 and thecharge-blocking material 44 within the cavities 72 to expose surfaces ofthe gate-dielectric material 46; and to pattern the charge-storagematerial 42 and the charge-blocking material 44 into segments 77 and 43,respectively, that extend around the projections 70.

The etching of one or both of the charge-blocking material 42 andcharge-storage material 44 from within voids 76 may be conducted with asame etchant as is utilized to form the voids 76, or may be conductedwith a different etchant than that utilized to form the voids 76.

Referring to FIG. 10, insulative material 26 is formed within voids 76.The insulative material 26 may be referred to as a third material insome embodiments, to distinguish it from the first and second materials66 and 68 of FIG. 3. The voids 49 (shown in dashed line to indicate thatthey are optional) may or may not remain as keyhole voids withinmaterial 26 after deposition of material 26 within the voids 76,depending on, for example, the composition of material 26, thedeposition conditions utilized, etc. The material 26 contacts thegate-dielectric material 46 along interfaces 47 in the shown embodiment.

Referring to FIG. 11, the second material 68 (FIG. 10) is removed toleave voids 80. Such removal may be accomplished with any suitable etchwhich is selective for the second material 68 relative to the materials26 and 42. The voids 80 may be referred to as second voids todistinguish them from the first voids 76 formed at the processing stageof FIG. 8. The term “first voids” may be utilized to refer to voidsformed by removing first material 66 (FIG. 3), and the term “secondvoids” may be utilized to refer to voids formed by removing secondmaterial 68. The second voids may be formed after the first voids, asshown in the processing of FIGS. 8-11; or may be formed before the firstvoids (as shown in processing described below with reference to FIGS.13-15).

The optional voids 49 may be referred to as third voids in someembodiments to distinguish them from the first and second voids 76 and80.

Referring to FIG. 12, insulative material 32 is formed within voids 80(FIG. 10) to line the voids, and thereby become an insulative linerwithin the voids. The insulative material 32 may comprise high-kmaterial (for instance, one or more of aluminum oxide, hafnium oxide,zirconium oxide, tantalum oxide, etc.) as discussed above with referenceto FIG. 1, and may be a charge-blocking material.

Conductive material 30 is formed within the lined voids 80 (FIG. 10)after forming insulative material 32, and then conductive material 28 isformed within the voids 80 (FIG. 10). The conductive material 28 may beconsidered to be a conductive core (as discussed above with reference toFIG. 1), and the conductive material 30 may be considered to be an outerconductive layer surrounding the conductive core (as is also discussedabove regarding FIG. 1).

The construction 10 b of FIG. 12 comprises a NAND memory array 12 banalogous to the NAND memory array 12 discussed above with reference toFIG. 1.

A second example embodiment method of fabricating a NAND memory array isdescribed with reference to FIGS. 13-17.

Referring to FIG. 13, a construction 10 c is shown at a processing stagefollowing that of FIG. 7. The construction 10 c is shown after thesecond material 68 (FIG. 7) is removed to leave voids 80 (the so-called“second voids”). Such removal may be accomplished with any suitable etchwhich is selective for the second material 68 relative to the materials66 and 42.

Referring to FIG. 14, materials 28, 30 and 32 are formed within thesecond voids 80 (FIG. 13).

Referring to FIG. 15, the first material 66 (FIG. 14) is removed toleave voids 76 (the so-called “first voids”). Such removal may beaccomplished with any suitable etch which is selective for the firstmaterial 66 relative to the charge-blocking materials 32 and 42.

Referring to FIG. 16, the charge-blocking material 42 and charge-storagematerial 44 are etched with etchant provided in voids 76 in processinganalogous to that described above with reference to FIG. 9.

Referring to FIG. 17, insulative material 26 is formed within voids 76(FIG. 16). The construction 10 c of FIG. 17 comprises a NAND memoryarray 12 c analogous to the NAND memory array 12 discussed above withreference to FIG. 1

A third example embodiment method of fabricating a NAND memory array isdescribed with reference to FIGS. 18-20.

Referring to FIG. 18, a construction 10 d is shown at a processing stagefollowing that of FIG. 8. The construction 10 d is shown after the etchinto the first voids 76 removes charge-blocking material 42 from withincavities 72, and thins charge-storage material 44. In contrast to theprocessing described above with reference to FIG. 9, the charge-storagematerial 44 is thinned, but not removed. The charge-storage material 44may be thinned to a final thickness T₄ having the dimensions describedabove with reference to FIG. 2.

Referring to FIG. 19, insulative material 26 is formed within voids 76(FIG. 18) with processing analogous to that described above withreference to FIG. 10.

Referring to FIG. 20, the second material 68 (FIG. 19) is removed withprocessing analogous to that described above with reference to FIG. 11to leave voids (like the voids 80 of FIG. 11); and then materials 28, 20and 32 are formed within the voids with processing analogous to thatdescribed above with reference to FIG. 12.

The construction 10 d of FIG. 20 comprises a NAND memory array 12 danalogous to the NAND memory array 12 a discussed above with referenceto FIG. 2.

A fourth example embodiment method of fabricating a NAND memory array isdescribed with reference to FIGS. 21 and 22.

Referring to FIG. 21, a construction 10 e is shown at a processing stagefollowing that of FIG. 15. The construction 10 e is shown after the etchinto the first voids 76 removes charge-blocking material 42 from withincavities 72, and thins charge-storage material 44. In contrast to theprocessing described above with reference to FIG. 16, the charge-storagematerial 44 is thinned, but not removed. The charge-storage material 44may be thinned to a final thickness T₄ having the dimensions describedabove with reference to FIG. 2.

Referring to FIG. 22, insulative material 26 is formed within voids 76(FIG. 21) with processing analogous to that described above withreference to FIG. 10.

The construction 10 e of FIG. 22 comprises a NAND memory array 12 eanalogous to the NAND memory array 12 a discussed above with referenceto FIG. 2.

The structures described above may be incorporated into electronicsystems. Such electronic systems may be used in, for example, memorymodules, device drivers, power modules, communication modems, processormodules, and application-specific modules, and may include multilayer,multichip modules. The electronic systems may be any of a broad range ofsystems, such as, for example, cameras, wireless devices, displays, chipsets, set top boxes, games, lighting, vehicles, clocks, televisions,cell phones, personal computers, automobiles, industrial controlsystems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

Both of the terms “dielectric” and “electrically insulative” may beutilized to describe materials having insulative electrical properties.The terms are considered synonymous in this disclosure. The utilizationof the term “dielectric” in some instances, and the term “electricallyinsulative” in other instances, may be to provide language variationwithin this disclosure to simplify antecedent basis within the claimsthat follow, and is not utilized to indicate any significant chemical orelectrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present.

Structures (e.g., layers, materials, etc.) may be referred to as“extending vertically” to indicate that the structures generally extendupwardly from an underlying base (e.g., substrate). Thevertically-extending structures may extend substantially orthogonallyrelative to an upper surface of the base, or not.

Some embodiments include a NAND memory array which has a vertical stackof alternating insulative levels and wordline levels. The wordlinelevels have terminal ends corresponding to control gate regions.Charge-trapping material is along the control gate regions of thewordline levels, and is spaced form the control gate regions bycharge-blocking material. The charge-trapping material along verticallyadjacent wordline levels is spaced by intervening regions through whichcharge migration is impeded. Channel material extends vertically alongthe stack and is spaced from the charge-trapping material bycharge-tunneling material.

Some embodiments include a NAND memory array which has a vertical stackof alternating insulative levels and wordline levels. The wordlinelevels have terminal ends corresponding to control gate regions. Theinsulative levels comprise first insulative material vertically betweenthe wordline levels. Charge-trapping material is along the control gateregions of the wordline levels, and is spaced form the control gateregions by charge-blocking material. The charge-trapping material alongvertically adjacent wordline levels is spaced by intervening regions ofsecond insulative material which impedes charge migration. Channelmaterial extends vertically along the stack and is spaced from thecharge-trapping material by charge-tunneling material.

Some embodiments include a NAND memory array which has a vertical stackof alternating insulative levels and wordline levels. The wordlinelevels have terminal ends corresponding to control gate regions. Theinsulative levels comprise first insulative material vertically betweenthe wordline levels. Charge-trapping material is along the control gateregions of the wordline levels, and is spaced form the control gateregions by charge-blocking material. The charge-trapping material alongvertically adjacent wordline levels is spaced by intervening regions ofsecond insulative material. The charge-trapping material comprisessilicon and nitrogen. The second insulative material comprises oxide.Voids extend into the first insulative material along an interface ofthe first and second insulative materials. Channel material extendsvertically along the stack and is spaced from the charge-trappingmaterial by charge-tunneling material.

Some embodiments include a method of forming a NAND memory array. Avertical stack of alternating first and second levels is formed. Thefirst levels comprise first material, and the second levels comprisesecond material. The first levels are recessed relative to the secondlevels. The second levels have projecting terminal ends extending beyondthe recessed first levels. Cavities extend into the first levels betweenthe projecting terminal ends. Charge-storage material is formed aroundthe terminal ends of the second levels. The charge-storage materialextends into the cavities to line the cavities. Charge-tunnelingmaterial is formed to extend vertically along the charge-storagematerial. The charge-tunneling material fills the lined cavities.Channel material is formed to extend vertically along thecharge-tunneling material. The first material is removed to leave firstvoids. Etchant provided in the first voids is utilized to etch into thecharge-storage material. Insulative third material is formed within thefirst voids after etching into the charge-storage material. The secondmaterial is removed to form second voids. Conductive levels are formedwithin the second voids. The conductive levels are wordline levels ofthe NAND memory array and have terminal ends corresponding to controlgate regions. The control gate regions are adjacent to thecharge-storage material.

Some embodiments include a method of forming a NAND memory array. Avertical stack of alternating first and second levels is formed. Thefirst levels comprise first material, and the second levels comprisesecond material. The first levels are recessed relative to the secondlevels. The second levels have projecting terminal ends extending beyondthe recessed first levels. Cavities extend into the first levels betweenthe projecting terminal ends. First charge-blocking material is formedaround the terminal ends of the second levels. Silicon nitride is formedover the first charge-blocking material and around the terminal ends ofthe second levels. The silicon nitride and the first charge-blockingmaterial extend into the cavities to line the cavities. Charge-tunnelingmaterial is formed to extend vertically along the silicon nitride. Thecharge-tunneling material extends into the lined cavities. Channelmaterial is formed to extend vertically along the charge-tunnelingmaterial. The first material is removed to leave first voids. Thesilicon nitride is etched with etchant provided in the first voids.Insulative third material is formed within the first voids after etchinginto the silicon nitride. The second material is removed to form secondvoids. The second voids are lined with second charge-blocking material.Conductive levels are formed within the lined second voids. Theconductive levels are wordline levels of the NAND memory array and haveterminal ends corresponding to control gate regions. The control gateregions are adjacent to the silicon nitride. Each of the conductivelevels comprises a conductive core surrounded by an outer conductivelayer. The conductive core comprises a different composition than theouter conductive layer.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

We claim:
 1. A memory device, comprising: a vertical stack ofalternating insulative levels and conductive levels, the conductivelevels having terminal ends corresponding to control gate regions;charge-trapping segments along the control gate regions of theconductive levels, and being spaced from the control gate regions by atleast one charge-blocking structure; the charge-trapping segments beingvertically spaced from one another by intervening regions; chargemigration being impeded along said intervening regions relative tocharge migration within the charge-trapping segments; and channelmaterial extending vertically along the stack and being spaced from thecharge-trapping segments by a charge-tunneling structure.
 2. The memorydevice of claim 1 wherein the respective intervening regions comprise atleast one of: a) a gap through the respective charge-trapping segments;and b) a thinned portion of charge-trapping material extending betweenrespective charge-trapping segments.
 3. The memory device of claim 1wherein portions of the charge-tunneling structure extend intorespective intervening regions.
 4. The memory device of claim 1 whereinthe charge-tunneling structure comprises respective gate dielectricregions of the memory device.
 5. The memory device of claim 1 whereinthe at least one charge-blocking structure comprises an insulativelayer.
 6. The memory device of claim 5 wherein the insulative layer isagainst respective terminal ends of the corresponding control gateregions.
 7. The memory device of claim 1 wherein the at least onecharge-blocking structure comprises charge-blocking material.
 8. Thememory device of claim 7 wherein the charge-blocking material is spacedfrom respective terminal ends of the corresponding control gate regions.9. A memory device, comprising: a vertical stack of alternatinginsulative levels and conductive levels, the conductive levels havingterminal ends corresponding to control gate regions; charge-storagesegments laterally spaced from, and surrounding, the terminal ends ofthe conductive levels; the charge-storage segments being verticallyspaced from one another by intervening regions that impede chargemigration between respective charge-storage segments; a gate dielectricstructure extending vertically along the stack; and a channel structureextending vertically along the gate dielectric structure.
 10. The memorydevice of claim 9 wherein the respective intervening regions comprise agap through the respective charge-storage segments.
 11. The memorydevice of claim 10 further comprising a thinned portion ofcharge-storage material extending through respective gaps betweenrespective charge-storage segments.
 12. The memory device of claim 10wherein the respective gaps are devoid of charge-storage material. 13.The memory device of claim 10 further comprising a thinned portion ofcharge-storage material extending through respective gaps betweenrespective charge-storage segments, the thinned portion of thecharge-storage material extends along respective interfaces of theinsulative levels.
 14. The memory device of claim 10 wherein portions ofthe gate dielectric structure extend into respective gaps.
 15. Thememory device of claim 9 wherein portions of the gate dielectricstructure extend into respective intervening regions.
 16. The memorydevice of claim 9 further comprising at least one charge-blockingstructure between respective terminal ends of the control gate regionsand the charge-storage segments.
 17. The memory device of claim 16wherein the at least one charge-blocking structure comprises aninsulative layer.
 18. The memory device of claim 17 wherein theinsulative layer is against respective terminal ends of thecorresponding control gate regions.
 19. The memory device of claim 16wherein the at least one charge-blocking structure comprisescharge-blocking material.
 20. The memory device of claim 19 wherein thecharge-blocking material is between respective terminal ends of thecorresponding control gate regions and respective charge-storagesegments.